3N191 P-CHANNEL MOSFET
The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECTREPLACEMENTFORINTERSIL3N191 LOWGATELEAKAGECURRENT IGSS10pA LOWTRANSFERCAPACITANCE Crss1.0pF The hermetically sealed TO-78 package is well suited ABSOLUTEMAXIMUMRATINGS1@25C(unlessotherwisenoted) for high reliability and harsh environment applications. MaximumTemperatures StorageTemperature 65Cto+150C (See Packaging Information). OperatingJunctionTemperature 55Cto+135C MaximumPowerDissipation ContinuousPowerDissipation(oneside) 300mW 3N191 Features: ContinuousPowerDissipation(oneside) 525mW MAXIMUMCURRENT Very high Input Impedance DraintoSource2 50mA High Gate Breakdown Voltage MAXIMUMVOLTAGES Low Capacitance DraintoGate orDraintoSource2 30V TransientGatetoSource2,3 125V GateGateVoltage 80V 3N191ELECTRICALCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVDSS DraintoSourceBreakdownVoltage 40 ID=10A BVSDS SourcetoDrainBreakdownVoltage 40 IS=10A,VBD=0V V VGS GatetoSourceVoltage 3.0 6.5 VDS=15V,ID=500A VGS(th) GatetoSourceThresholdVoltage 2.0 5.0 VDS=15V,ID=500A 2.0 5.0 VDS=VGS,ID=10A IGSSR GateReverseLeakageCurrent 10 VGS=40V IGSSF ForwardGateLeakageCurrent 10 VGS=40V pA IDSS DraintoSourceLeakageCurrent 200 VDS=15V ISDS SourcetoDrainLeakageCurrent 400 VSD=15VVDB=0 ID(on) DrainCurrent"On" 5.0 30 mA VDS=15V,VGS=10V rDS(on) DraintoSource"On"Resistance 300 VDS=20V,ID=100A gfs ForwardTransconductance4 1500 4000 S VDS=15V,ID=5mA,f=1kHz The 3N191 is a dual enhancement mode P-Channel Mosfet and is ideal for space constrained applications and those requiring tight electrical matching. Yos Ciss InputCapacitance 4.5 pF VDS=15V,ID=5mA,f=1MHz Crss ReverseTransferCapacitance 1.0 Coss OutputCapacitance 3.0 MATCHINGCHARACTERISTICS3N191 SYMBOL LIMITS CHARACTERISTIC UNITS CONDITIONS MIN MAX gfs1/gfs2 ForwardTransconductanceRatio 0.85 1.0 ns VDS=15V,ID=500A,f=kHz VGS12 GateSourceThresholdVoltage 100 mV VDS=15V,ID=500A Differential5 VDS=15V,ID=500A,TS=55Cto+25C VGS12/T GateSourceThresholdVoltage 5 100 V/C DifferentialChangewithTemperature VDS=15V,ID=500A,TS=+25Cto+125C SWITCHINGCHARACTERISTICS SYMBOL CHARACTERISTIC td(on) TurnOnDelayTime tr TurnOnRiseTime toff TurnOffTime MIN TYP MAX 15 30 50 UNITS ns CONDITIONS VDD=15V,ID(on)=5mA,RG=RL=1.4K
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OutputAdmittance 300
Note1Absolutemaximumratingsarelimitingvaluesabovewhich3N191 serviceabilitymaybeimpaired. Note2-PerTransistor Note3-Approximatelydoublesforevery10CinTA Device Schematic Note4-Measuredatendpoints,TAandTB Note5-Pulse:t=300S,DutyCycle3%
TO-78 (Bottom View)
Available Packages: 3N191 in TO-72 3N191 in bare die. Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions
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